| 产品特性：LOW rdson | 品牌：ST | 型号：STP110N8F6 |
| 类型：稳压IC | 用途：电动玩具 | 封装：TO220 |
| 批号：2018+ | 特色服务：技术支持 | 产品说明：MOS |
| 是否跨境货源：否 | 应用领域：汽车电子 |
Features 鈥� Very low on-resistance 鈥� Very low gate charge 鈥� High avalanche ruggedness 鈥� Low gate drive power loss Applications 鈥� Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET鈩� F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Electrical characteristics (TC = 25 掳C unless otherwise specified) Table 4. On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 80 V IDSS Zero-gate voltage drain current VGS = 0, VDS = 80 V 1 碌A VGS = 0, VDS = 80 V, TC = 125 掳C 100 碌A IGSS Gate-body leakage current VDS = 0, VGS = +20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 碌A 2.5 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 55 A 0.0056 0.0065 鈩� Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 40 V, f = 1 MHz, VGS = 0 - 9130 - pF Coss Output capacitance - 320 - pF Crss Reverse transfer capacitance - 225 - pF Qg Total gate charge VDD = 40 V, ID = 110 A, VGS = 10 V (see Figure 14) - 150 - nC Qgs Gate-source charge - 40 - nC Qgd Gate-drain charge - 30 - nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 55 A, RG = 4.7 鈩�, VGS = 10 V (see Figure 13) - 24 - ns tr Rise time - 61 - ns td(off) Turn-off delay time - 162 - ns tf Fall time - 48 - ns
